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MDD1654 - 30V N-channel Trench MOSFET

Datasheet Summary

Description

The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD1654 is suitable device for PWM, Load Switching and general purpose applications.

Features

  • VDS = 30V ID = 55A @VGS = 10V RDS(ON) < 6.0mΩ @VGS = 10V < 9.5mΩ @VGS = 4.5V Absoloute Maximun Ratings (Ta = 25 C) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (2) (1) o Symbol VDSS VGSS TC=25 C TC=100 C TC=25 C TC=100 C TA=25 C TA=70 C o o o o o o Rating 30 ±20 55 40 200 50 25 3 2.1 200 -55~150 Unit V V A A A W W mJ o ID IDM PD PDSM EAS TJ, Tstg Junction and Storage.

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Datasheet Details

Part number MDD1654
Manufacturer MagnaChip
File Size 1.10 MB
Description 30V N-channel Trench MOSFET
Datasheet download datasheet MDD1654 Datasheet
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MDD1654 – Single N-Channel Trench MOSFET 30V MDD1654 30V N-channel Trench MOSFET : 30V, 55A, 6.0mΩ General Description The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load Switching and general purpose applications. Features VDS = 30V ID = 55A @VGS = 10V RDS(ON) < 6.0mΩ @VGS = 10V < 9.5mΩ @VGS = 4.5V Absoloute Maximun Ratings (Ta = 25 C) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (2) (1) o Symbol VDSS VGSS TC=25 C TC=100 C TC=25 C TC=100 C TA=25 C TA=70 C o o o o o o Rating 30 ±20 55 40 200 50 25 3 2.
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