MDD1654 Datasheet | MagnaChip

- Single N-Channel Trench MOSFET 30V 30V N-channel Trench MOSFET : 30V, 55A, 6.0mΩ General Description The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load Switching and general purpose applications. Features VDS = 30V ID = 55A @VGS = 10V RDS(ON) < 6.0mΩ @VGS = 10V < 9.5mΩ @VGS = 4.5V Absoloute Maximun Ratings (Ta = 25 C) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (2) (1) o Symbol VDSS VGSS TC=25 C TC=100 C TC=25 C TC=100 C TA=25 C TA=70 C o o o o o o Rating 30 ±20 55 40 200 50 25 3 2.1 200 -55~150 Unit V V A A A W W m J o ID IDM PD PDSM EAS TJ, Tstg Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case ) (1) Symbol RθJA RθJC Rating 42 2.5 Unit o C/W August 2008. Version 1.0 Magna Chip Semiconductor Ltd. http://.. - Single N-Channel Trench MOSFET 30V Ordering Information Part Number MDD1654T MDD1654R Temp. Range -55~150 C o -55~150 C o Package D-PAK D-PAK Packing Tube Tape & Reel Rohs Status Halogen Free Halogen Free Electrical Characteristics (Ta =25 C) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Characteristics Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Rise Time Trun-Off Delay Time Delay Time Symbol Test Condition Min Typ Max Unit...