MDIB6N70C
MDIB6N70C is N-Channel Trench MOSFET manufactured by MagnaChip.
Description
The MDIB6N70C use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDIB6N70C is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 700V ID = 5.0A RDS(ON) ≤ 1.8Ω
@VGS = 10V @VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
TO-251 (IPAK)
Absolute Maximum Ratings (Ta = 25o C)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
TC=25o C TC=100o C
TC=25o C Derate above 25 o C
Symbol
VDSS VGSS
PD dv/dt EAR...
