MMD25R210RZ - N-channel MOSFET

MagnaChip

General Description

MMD25R210RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Key Features

Low power loss by high speed switching and low on-resistance.
100% avalanche tested.
Green package.
Pb free plating, halogen free.
Zener - integrated.

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MMD25R210RZ n-channel mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MMD25R210RZ
Manufacturer	MagnaChip
File Size	722.53 KB
Description	N-channel MOSFET
Datasheet	MMD25R210RZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMD25R210RZ Datasheet MMD25R210RZ 250V 0.21Ω N-channel MOSFET  Description MMD25R210RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI and low switching loss as well as excellent ESD capability to designers.  Key Parameters  Package & Internal Circuit Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 300 0.21 3 13.