MMD25R210RZ
MMD25R210RZ is N-channel MOSFET manufactured by MagnaChip.
Description
MMD25R210RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI and low switching loss as well as excellent ESD capability to designers.
- Key Parameters
- Package & Internal Circuit
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 300 0.21
3 13.8 17
Unit V Ω V A n C
- Features
- Low power loss by high speed switching and low on-resistance
- 100% avalanche tested
- Green package
- Pb free plating, halogen free
- Zener
- integrated
- Applications
- Switching applications
- DC-DC converters
- Motor control
- Ordering Information
Order Code
Marking
MMD25R210RZRH 25R210RZ
Temp. Range
-55 ~ 150o C
Package TO-252
Packing Reel
Ro HS Status pliant
Aug. 2024 Revision 1.3
Magnachip Semiconductor Ltd.
MMD25R210RZ Datasheet
- Absolute Maximum Rating (Tc=25o C unless otherwise specified)
Parameter Drain
- source voltage Gate
- source voltage
Symbol VDSS VGSS
Continuous drain current...
