SLB840F - 500V N-Channel MOSFET

Product Overview

Maple Semiconductor

Part number	SLB840F
Manufacturer	Maple Semiconductor
File Size	363.87 KB
Description	500V N-Channel MOSFET
Datasheet	SLB840F Datasheet
Additional preview pages of the SLB840F datasheet.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 8A, 500V, RDS(on) typ. = 0.7Ω@VGS = 10V - Low gate charge ( typical 15.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single.

📁 Similar Datasheet

Other Datasheets by Maple Semiconductor

Published: Dec 27, 2018 |