ME12N04 Datasheet | Matsuki

DESCRIPTION The ME12N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES - RDS(ON)=28mΩ@VGS=10V (N-Ch) - RDS(ON)=52mΩ@VGS=4.5V (N-Ch) - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - LCD Display inverter CONFIGURATION (TO-252-3L) Top View e Ordering Information: ME12N04 (Pb-free) ME12N04-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current- Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient- Thermal Resistance-Junction to Case- - The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDS VGS TC=25℃ TC=70℃ ID IDM TC=25℃ TC=70℃ PD TJ RθJA RθJC Maximum Ratings 40 ±25 22 18 80 25 16 -55 to 150 42 5 Unit V V A A W ℃ ℃/W ℃/W Mar, 2012-Ver2.2 ME12N04/ME12N04-G N- Channel 40-V (D-S) MOSFET Electrical Characteristics (TC =25℃ Unless Otherwise Specified) Symbol Parameter STATIC V(BR)DSS VGS(th) IGSS IDSS RDS(ON) VSD DYNAMIC Qg Qgs Qgd Rg Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time VDD=15V, RL =15Ω ID=1A, VGEN=10V, RG=6Ω VDS=20V, VGS=0V, F=1MHz VGS=0V, VDS=0V, f=1MHZ...