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ME12P04-G - P-Channel 40-V (D-S) MOSFET

Download the ME12P04-G datasheet PDF. This datasheet also covers the ME12P04 variant, as both devices belong to the same p-channel 40-v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦45mΩ@VGS=-10V.
  • RDS(ON)≦80mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME12P04-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME12P04-G
Manufacturer Matsuki
File Size 0.97 MB
Description P-Channel 40-V (D-S) MOSFET
Datasheet download datasheet ME12P04-G Datasheet

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Other Datasheets by Matsuki

Part Number Description
ME12P04 P-Channel 40-V (D-S) MOSFET
ME12N04 N-Channel 40-V (D-S) MOSFET
ME12N04-G N-Channel 40-V (D-S) MOSFET
ME12N15 N-Channel MOSFET
ME12N15-G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME12P04/ME12P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦45mΩ@VGS=-10V ● RDS(ON)≦80mΩ@VGS=-4.