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ME12N15-G - N-Channel MOSFET

Product Overview

Matsuki

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ME12N15-G N-Channel MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME12N15-G

Datasheet Details

Part number	ME12N15-G
Manufacturer	Matsuki
File Size	934.58 KB
Description	N-Channel MOSFET
Datasheet	ME12N15-G Datasheet
Note	This datasheet PDF includes multiple part numbers: ME12N15-G, ME12N15. Please refer to the document for exact specifications by model.
Additional preview pages of the ME12N15-G datasheet.

Product details

Description

The ME12N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦150mΩ@VGS=10V.
RDS(ON)≦250mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 21, 2018 |