Datasheet Summary
N-Channel Enhancement MOSFET
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
ME25N06(-G)
Features
- RDS(ON)≦62mΩ@VGS=10V
- RDS(ON)≦86mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional...