ME2N7002KW
DESCRIPTION
FEATURES
The ME2N7002KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
- RDS(ON)≦3Ω@VGS=10V
- RDS(ON)≦4Ω@VGS=4.5V
- ESD Protection HBM >1KV
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter
(SOT-363) Top View
- Th Ordering Information: ME2N7002KW (Green...
