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ME3205P-G - N-Channel MOSFET

This page provides the datasheet information for the ME3205P-G, a member of the ME3205P N-Channel MOSFET family.

Datasheet Summary

Description

The ME3205P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

  • RDS(ON)≦6.5mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME3205P-G

Datasheet Details

Part number ME3205P-G
Manufacturer Matsuki
File Size 904.20 KB
Description N-Channel MOSFET
Datasheet download datasheet ME3205P-G Datasheet
Additional preview pages of the ME3205P-G datasheet.

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Full PDF Text Transcription

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N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME3205P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-251) Top View ME3205P/ME3205P-G FEATURES ● RDS(ON)≦6.
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