ME3985DS-G Overview
The ME3985DS is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching...
ME3985DS-G Key Features
- RDS(ON)≦120mΩ@VGS=-4.5V
- RDS(ON)≦160mΩ@VGS=-2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME3985DS-G Applications
- Power Management in Note book