ME3920-G Description
The ME3920-G is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are...
ME3920-G Key Features
- RDS(ON)≦24mΩ@ VGS =10V
- RDS(ON)≦46mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME3920-G Applications
- Power Management in Note book