The ME3920-G is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | ME3920-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 896.72 KB |
| Description | Dual N-Channel 30V (D-S) MOSFET |
| Datasheet |
 ME3920-G Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| ME3-ETO | Electrochemical Sensor | Winsen |
| ME3-HF | Electrochemical Sensor | Winsen |
| ME3-NO2 | Electrochemical Gas Sensor | Winsen |
| ME301C | DC-DC Converter | Microne |
| ME3101 | 500mA Synchronous Step-Down DC/DC Converters | Microne |
| Part Number | Description |
|---|---|
| ME3981 | Dual P-Channel 20V (D-S) MOSFET |
| ME3981-G | Dual P-Channel 20V (D-S) MOSFET |
| ME3985DS | Dual P-Channel 20V (D-S) MOSFET |
| ME3985DS-G | Dual P-Channel 20V (D-S) MOSFET |
| ME3205F | N-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
