Datasheet4U Logo Datasheet4U.com

ME3985DS - Dual P-Channel 20V (D-S) MOSFET

Description

The ME3985DS is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦120mΩ@VGS=-4.5V.
  • RDS(ON)≦160mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet Details

Part number ME3985DS
Manufacturer Matsuki
File Size 670.59 KB
Description Dual P-Channel 20V (D-S) MOSFET
Datasheet download datasheet ME3985DS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME3-ETO Electrochemical Sensor Winsen
ME3-HF Electrochemical Sensor Winsen
ME3-NO2 Electrochemical Gas Sensor Winsen
ME301C DC-DC Converter Microne
ME3101 500mA Synchronous Step-Down DC/DC Converters Microne

Other Datasheets by Matsuki

Part Number Description
ME3985DS-G Dual P-Channel 20V (D-S) MOSFET
ME3981 Dual P-Channel 20V (D-S) MOSFET
ME3981-G Dual P-Channel 20V (D-S) MOSFET
ME3920-G Dual N-Channel 30V (D-S) MOSFET
ME3205F N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME3985DS/ME3985DS-G Dual P-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION The ME3985DS is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦120mΩ@VGS=-4.5V ● RDS(ON)≦160mΩ@VGS=-2.
Published: |