Datasheet4U Logo Datasheet4U.com

ME4942-G - Dual N-Channel MOSFET

This page provides the datasheet information for the ME4942-G, a member of the ME4942 Dual N-Channel MOSFET family.

Datasheet Summary

Description

The ME4942 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦20mΩ@VGS=10V.
  • RDS(ON)≦29mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ME4942-G

Datasheet Details

Part number ME4942-G
Manufacturer Matsuki
File Size 1.01 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME4942-G Datasheet
Additional preview pages of the ME4942-G datasheet.

📁 Similar Datasheet

  • ME4925 - Dual P-Channel MOSFET (VBsemi)
  • ME4950 - Dual N-Channel 100V MOSFET (VBsemi)
  • ME4-H2 - Hydrogen Gas Sensor (Winsen)
  • ME4-NH3 - Ammonia Gas Sensor (Winsen)
  • ME4-SO2 - Electrochemical Sulfur Dioxide Sensor (Winsen)
  • ME401C - DC-DC Converter (Microne)
  • ME4052 - High-voltage dual-cell linear charger (ChipSourceTek)
  • ME4054 - Standalone Linear Li-Ion Battery Charger (Microne)
  • ME4054B-N - 500mA Lithium Ion Battery Linear Charger (ChipSourceTek)
  • ME4054B-N - 500mA Lithium Ion Battery Linear Charger (Microne)
Other Datasheets by Matsuki

Full PDF Text Transcription

Click to expand full text
Dual N-Channel 40-V (D-S) MOSFET ME4942/ME4942-G GENERAL DESCRIPTION The ME4942 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON)≦20mΩ@VGS=10V ● RDS(ON)≦29mΩ@VGS=4.
Published: |