ME4947 - P-Channel MOSFET

Matsuki

General Description

The ME4947 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦72mΩ@VGS=-10V.
RDS(ON)≦94mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME4947 p-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME4947
Manufacturer	Matsuki
File Size	1.04 MB
Description	P-Channel MOSFET
Datasheet	ME4947 Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME4947-G	P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4947 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4947/ME4947-G FEATURES ● RDS(ON)≦72mΩ@VGS=-10V ● RDS(ON)≦94mΩ@VGS=-4.