ME4948 Key Features
- RDS(ON)≦53 mΩ@VGS=10V
- RDS(ON)≦78 mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
| Part Number | Description |
|---|---|
| ME4948-G | Dual N-Channel MOSFET |
| ME4942 | Dual N-Channel MOSFET |
| ME4942-G | Dual N-Channel MOSFET |
| ME4946 | Dual N-Channel MOSFET |
| ME4947 | P-Channel MOSFET |