ME7812S-G
ME7812S-G is N-Channel MOSFET manufactured by Matsuki.
DESCRIPTION
The ME7812S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
- RDS(ON) ≦8.5mΩ@VGS=10V
- RDS(ON) ≦17.5mΩ@VGS=4.5V
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- DSC
PIN CONFIGURATION
(DFN 3.3x3.3) Top View e Ordering Information: ME7812S-G (Green product-Halogen free)
Absolute Maximum Ratings (Tj=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source...
