ME7812S-G Overview
The ME7812S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low...
ME7812S-G Key Features
- RDS(ON) ≦8.5mΩ@VGS=10V
- RDS(ON) ≦17.5mΩ@VGS=4.5V
ME7812S-G Applications
- Power Management in Note book