Datasheet Details
| Part number | ME7812S-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.09 MB |
| Description | N-Channel MOSFET |
| Datasheet | ME7812S-G-Matsuki.pdf |
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Overview: ME7812S-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode.
| Part number | ME7812S-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.09 MB |
| Description | N-Channel MOSFET |
| Datasheet | ME7812S-G-Matsuki.pdf |
|
|
|
The ME7812S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
Compare ME7812S-G distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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