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ME7818S-G - N-Channel MOSFET

Description

The ME7818S-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

  • RDS(ON)≦108mΩ@VGS=10V.
  • RDS(ON)≦137mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME7818S-G

Datasheet Details

Part number ME7818S-G
Manufacturer Matsuki
File Size 927.61 KB
Description N-Channel MOSFET
Datasheet download datasheet ME7818S-G Datasheet
Additional preview pages of the ME7818S-G datasheet.

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Full PDF Text Transcription

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N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME7818S-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN(S) 3X3) Top View ME7818S-G FEATURES ● RDS(ON)≦108mΩ@VGS=10V ● RDS(ON)≦137mΩ@VGS=4.
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