ME7814S-G Datasheet | Matsuki

DESCRIPTION The ME7814S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN(S) 3.3x3.3) Top View FEATURES - RDS(ON)≦3.6mΩ@VGS=10V - RDS(ON)≦5.1mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch Ordering Information: ME7814S (Pb-free) ME7814S-G (Green product-Halogen...