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ME7900ED-G Datasheet Dual N-channel MOSFET

Manufacturer: Matsuki

Datasheet Details

Part number ME7900ED-G
Manufacturer Matsuki
File Size 895.74 KB
Description Dual N-Channel MOSFET
Datasheet ME7900ED-G-Matsuki.pdf

General Description

The ME7900ED-G is the dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology .

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦22mΩ@VGS=4.5V.
  • RDS(ON)≦23mΩ@VGS=4V.
  • RDS(ON)≦25mΩ@VGS=3.1V.
  • RDS(ON)≦30mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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ME7900ED-G Distributor