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ME7906ED - N-Channel MOSFET

Description

The ME7906ED is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology .

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦22mΩ@VGS=4.5V.
  • RDS(ON)≦23mΩ@VGS=4V.
  • RDS(ON)≦30mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Green product-Halogen free.

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Datasheet Details

Part number ME7906ED
Manufacturer Matsuki
File Size 1.30 MB
Description N-Channel MOSFET
Datasheet download datasheet ME7906ED Datasheet

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Full PDF Text Transcription

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N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION The ME7906ED is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TDFN 2x2) Top View ME7906ED FEATURES ● RDS(ON)≦22mΩ@VGS=4.5V ● RDS(ON)≦23mΩ@VGS=4V ● RDS(ON)≦30mΩ@VGS=2.
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