ME7906ED Description
The ME7906ED is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching ,...
ME7906ED Key Features
- RDS(ON)≦22mΩ@VGS=4.5V
- RDS(ON)≦23mΩ@VGS=4V
- RDS(ON)≦30mΩ@VGS=2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Green product-Halogen free
ME7906ED Applications
- Power Management in Note book