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ME7908ED-G - N-Channel MOSFET

Description

The ME7908ED-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology .

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦16mΩ@VGS=4.5V.
  • RDS(ON)≦24mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME7908ED-G
Manufacturer Matsuki
File Size 1.13 MB
Description N-Channel MOSFET
Datasheet download datasheet ME7908ED-G Datasheet

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Full PDF Text Transcription

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N-Channel 20-V(D-S) MOSFET GENERAL DESCRIPTION The ME7908ED-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package. PIN CONFIGURATION (DFN 3x3) Top View ME7908ED-G FEATURES ● RDS(ON)≦16mΩ@VGS=4.5V ● RDS(ON)≦24mΩ@VGS=2.
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