ME7908ED-G Description
The ME7908ED-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package.
ME7908ED-G Key Features
- RDS(ON)≦16mΩ@VGS=4.5V
- RDS(ON)≦24mΩ@VGS=2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME7908ED-G Applications
- Power Management in Note book