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ME7910D Datasheet Dual N-channel MOSFET

Manufacturer: Matsuki

Overview: ME7910D/ME7910D-G Dual N-Channel 20-V(D-S) MOSFET , ESD Protection.

Datasheet Details

Part number ME7910D
Manufacturer Matsuki
File Size 859.41 KB
Description Dual N-Channel MOSFET
Datasheet ME7910D-Matsuki.pdf

General Description

The ME7910D is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦14mΩ@VGS=4.5V.
  • RDS(ON)≦15mΩ@VGS=4V.
  • RDS(ON)≦17.5mΩ@VGS=3.1V.
  • RDS(ON)≦21mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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ME7910D Distributor