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ME7910D-G - Dual N-Channel MOSFET

Download the ME7910D-G datasheet PDF. This datasheet also covers the ME7910D variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME7910D is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦14mΩ@VGS=4.5V.
  • RDS(ON)≦15mΩ@VGS=4V.
  • RDS(ON)≦17.5mΩ@VGS=3.1V.
  • RDS(ON)≦21mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME7910D-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME7910D-G
Manufacturer Matsuki
File Size 859.41 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME7910D-G Datasheet

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Full PDF Text Transcription

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ME7910D/ME7910D-G Dual N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL DESCRIPTION The ME7910D is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN 3x3 ) Top View FEATURES ● RDS(ON)≦14mΩ@VGS=4.5V ● RDS(ON)≦15mΩ@VGS=4V ● RDS(ON)≦17.5mΩ@VGS=3.1V ● RDS(ON)≦21mΩ@VGS=2.
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