ME7910D-G Datasheet | Matsuki

DESCRIPTION The ME7910D is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN 3x3 ) Top View FEATURES - RDS(ON)≦14mΩ@VGS=4.5V - RDS(ON)≦15mΩ@VGS=4V - RDS(ON)≦17.5mΩ@VGS=3.1V - RDS(ON)≦21mΩ@VGS=2.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - Battery Powered System - DC/DC Converter low side...