ME80N75AT-G Datasheet | Matsuki

DESCRIPTION The ME80N75AT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES - RDS(ON)≦10.5mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management - DC/DC Converter - Load Switch (TO-220) Top View e Ordering Information: ME80N75AT (Pb-free) ME80N75AT-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Rating Unit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS ±25 Continuous Drain Current- TC=25℃ TC=70℃ 93 78 Pulsed Drain Current IDM 372 Maximum Power Dissipation TC=25℃ TC=70℃ 200 140 Operating...