Datasheet4U Logo Datasheet4U.com

ME80N75AT-G - N-Channel MOSFET

This page provides the datasheet information for the ME80N75AT-G, a member of the ME80N75AT N-Channel MOSFET family.

Datasheet Summary

Description

The ME80N75AT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦10.5mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ME80N75AT-G

Datasheet Details

Part number ME80N75AT-G
Manufacturer Matsuki
File Size 696.78 KB
Description N-Channel MOSFET
Datasheet download datasheet ME80N75AT-G Datasheet
Additional preview pages of the ME80N75AT-G datasheet.

📁 Similar Datasheet

  • ME8100 - HIGH PERFORMANCE OFF-LINE CONTROLLER (Microne)
  • ME8101 - High Performance Current Mode PWM switching power supply controller (Microne)
  • ME8105 - PWM Controller of High-performance Current Mode (Microne)
  • ME8107 - Current Mode PWM Controller (Microne)
  • ME8110 - Power Management IC (ETC)
  • ME8110 - Current Mode PWM Power Switch (Microne)
  • ME8110B - High performance current mode PWM controller (YUSHIN)
  • ME8115 - High-Performance Current Mode PWM Switching Power Controller (Microne)
  • ME8119 - Current Mode PWM Controller (Microne)
  • ME8200 - Current Mode PWM Controller (Microne)
Other Datasheets by Matsuki

Full PDF Text Transcription

Click to expand full text
ME80N75AT / ME80N75AT-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME80N75AT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦10.
Published: |