ME80N75AF-G Datasheet | Matsuki

DESCRIPTION The ME80N75AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook puter power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES - RDS(ON)≦10mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management - DC/DC Converter - Load Switch PIN CONFIGURATION (TO-220F) Top View - The Ordering Information: ME80N75AF (Pb-free) ME80N75AF-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-So...