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ME80N75AF-G - N-Channel MOSFET

Download the ME80N75AF-G datasheet PDF. This datasheet also covers the ME80N75AF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME80N75AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦10mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME80N75AF-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME80N75AF-G
Manufacturer Matsuki
File Size 898.94 KB
Description N-Channel MOSFET
Datasheet download datasheet ME80N75AF-G Datasheet

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Other Datasheets by Matsuki

Part Number Description
ME80N75AF N-Channel MOSFET
ME80N75AT N-Channel MOSFET
ME80N75AT-G N-Channel MOSFET
ME80N75F N-Channel MOSFET
ME80N75F-G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME80N75AF / ME80N75AF-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME80N75AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.