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ME80N75AF-G - N-Channel MOSFET

This page provides the datasheet information for the ME80N75AF-G, a member of the ME80N75AF N-Channel MOSFET family.

Datasheet Summary

Description

The ME80N75AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦10mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME80N75AF-G

Datasheet Details

Part number ME80N75AF-G
Manufacturer Matsuki
File Size 898.94 KB
Description N-Channel MOSFET
Datasheet download datasheet ME80N75AF-G Datasheet
Additional preview pages of the ME80N75AF-G datasheet.

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Full PDF Text Transcription

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ME80N75AF / ME80N75AF-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME80N75AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
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