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ME80N75AT - N-Channel MOSFET

Datasheet Summary

Description

The ME80N75AT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦10.5mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME80N75AT

Datasheet Details

Part number ME80N75AT
Manufacturer Matsuki
File Size 696.78 KB
Description N-Channel MOSFET
Datasheet download datasheet ME80N75AT Datasheet
Additional preview pages of the ME80N75AT datasheet.

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ME80N75AT / ME80N75AT-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME80N75AT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦10.
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