ME80N75AT
ME80N75AT is N-Channel MOSFET manufactured by Matsuki.
DESCRIPTION
The ME80N75AT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
FEATURES
- RDS(ON)≦10.5mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management
- DC/DC Converter
- Load Switch
(TO-220) Top View e Ordering Information: ME80N75AT (Pb-free)
ME80N75AT-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol Maximum Rating
Unit
Drain-Source Voltage
VDS 75
Gate-Source Voltage
VGS ±25
Continuous Drain Current-
TC=25℃ TC=70℃
93 78
Pulsed Drain Current
IDM 372
Maximum Power Dissipation
TC=25℃ TC=70℃
200 140
Operating...
