ME80N75F-G Datasheet | Matsuki

DESCRIPTION The ME80N75F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220F) Top View FEATURES - RDS(ON)≦10mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management - DC/DC Converter - Load Switch - The Ordering Information: ME80N75F (Pb-free) ME80N75F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Single pulse Avalanche Current L=0.3m H Single pulse Avalanche Energy L=0.3m H Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃ TC=70℃ TC=25℃...