Datasheet4U Logo Datasheet4U.com

ME8117-G - P-Channel MOSFET

Download the ME8117-G datasheet PDF. This datasheet also covers the ME8117 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦5.2mΩ@VGS=-10V.
  • RDS(ON)≦9.5mΩ@VGS=-4V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME8117-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME8117-G
Manufacturer Matsuki
File Size 1.03 MB
Description P-Channel MOSFET
Datasheet download datasheet ME8117-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME8110 Power Management IC ETC
ME8110 Current Mode PWM Power Switch Microne
ME8110B High performance current mode PWM controller YUSHIN
ME8115 High-Performance Current Mode PWM Switching Power Controller Microne
ME8119 Current Mode PWM Controller Microne

Other Datasheets by Matsuki

Part Number Description
ME8117 P-Channel MOSFET
ME8117A P-Channel MOSFET
ME8117A-G P-Channel MOSFET
ME8107 P-Channel Enhancement Mode MOSFET
ME8107-G P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME8117/ME8117-G FEATURES ● RDS(ON)≦5.2mΩ@VGS=-10V ● RDS(ON)≦9.