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ME8117-G Datasheet P-channel MOSFET

Manufacturer: Matsuki

Overview: P-Channel 30V (D-S) MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦5.2mΩ@VGS=-10V.
  • RDS(ON)≦9.5mΩ@VGS=-4V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

Part Number Description
ME8117 P-Channel MOSFET
ME8117A P-Channel MOSFET
ME8117A-G P-Channel MOSFET
ME8107 P-Channel Enhancement Mode MOSFET
ME8107-G P-Channel Enhancement Mode MOSFET
ME80N08 N-Channel 80-V (D-S) MOSFET
ME80N08-G N-Channel 80-V (D-S) MOSFET
ME80N08A N-Channel MOSFET
ME80N08A-G N-Channel MOSFET
ME80N08AF N-Channel MOSFET

ME8117-G Distributor