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ME8117A - P-Channel MOSFET

Datasheet Summary

Description

The ME8117A-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦5.2mΩ@VGS=-10V.
  • RDS(ON)≦10.5mΩ@VGS=-4V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME8117A

Datasheet Details

Part number ME8117A
Manufacturer Matsuki
File Size 1.99 MB
Description P-Channel MOSFET
Datasheet download datasheet ME8117A Datasheet
Additional preview pages of the ME8117A datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode MOSFET ME8117A /ME8117A-G GENERAL DESCRIPTION The ME8117A-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON)≦5.2mΩ@VGS=-10V ● RDS(ON)≦10.
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