ME95N10F-G Description
The ME95N10F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
ME95N10F-G Key Features
- RDS(ON)≦8.5mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current