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ME95N10T-G Datasheet

Manufacturer: Matsuki

This datasheet includes multiple variants, all published together in a single manufacturer document.

ME95N10T-G datasheet preview

Datasheet Details

Part number ME95N10T-G
Datasheet ME95N10T-G ME95N10T Datasheet (PDF)
File Size 901.02 KB
Manufacturer Matsuki
Description N-Channel MOSFET
ME95N10T-G page 2 ME95N10T-G page 3

ME95N10T-G Overview

The ME95N10T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.

ME95N10T-G Key Features

  • RDS(ON)≦8.5mΩ@VGS=10V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current
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ME95N10T-G Distributor

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