ME95N10T-G Datasheet | Matsuki

DESCRIPTION The ME95N10T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. FEATURES - RDS(ON)≦8.5mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability PIN CONFIGURATION (TO-220) Top View - The Ordering Information: ME95N10T (Pb-free) ME95N10T-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current- TC=25℃ TC=70℃ VGS ID ±25 124 104 Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ IDM PD 496 300 210 Junction and Storage Temperature Range TJ, Tstg -55 to 175 Thermal Resistance-Junction to Case- -...