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ME95N10F - N-Channel MOSFET

Description

The ME95N10F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

  • RDS(ON)≦8.5mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability PIN.

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Datasheet preview – ME95N10F

Datasheet Details

Part number ME95N10F
Manufacturer Matsuki
File Size 920.67 KB
Description N-Channel MOSFET
Datasheet download datasheet ME95N10F Datasheet
Additional preview pages of the ME95N10F datasheet.

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Full PDF Text Transcription

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N-Channel 100-V (D-S) MOSFET ME95N10F/ME95N10F-G GENERAL DESCRIPTION The ME95N10F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. FEATURES ● RDS(ON)≦8.5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability PIN CONFIGURATION (TO-220F) Top View * The Ordering Information: ME95N10F (Pb-free) ME95N10F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current* TC=25℃ TC=70℃ VGS ID ±25 56.3 47.
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