ME95N10F
ME95N10F is N-Channel MOSFET manufactured by Matsuki.
DESCRIPTION
The ME95N10F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
FEATURES
- RDS(ON)≦8.5mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
PIN CONFIGURATION
(TO-220F) Top View
- The Ordering Information: ME95N10F (Pb-free) ME95N10F-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Voltage
VDS 100
Gate-Source Voltage Continuous Drain Current-
TC=25℃ TC=70℃
VGS ID
±25 56.3 47.1
Pulsed Drain Current
IDM 225
Maximum Power Dissipation
TC=25℃ TC=70℃
61.9 43.3
Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
Thermal Resistance-Junction to Case-
-...
