ME95N10F - N-Channel MOSFET

Matsuki

General Description

The ME95N10F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Key Features

RDS(ON)≦8.5mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability PIN.

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ME95N10F n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME95N10F
Manufacturer	Matsuki
File Size	920.67 KB
Description	N-Channel MOSFET
Datasheet	ME95N10F Datasheet

Other Datasheets by Matsuki

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel 100-V (D-S) MOSFET ME95N10F/ME95N10F-G GENERAL DESCRIPTION The ME95N10F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. FEATURES ● RDS(ON)≦8.5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability PIN CONFIGURATION (TO-220F) Top View * The Ordering Information: ME95N10F (Pb-free) ME95N10F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current* TC=25℃ TC=70℃ VGS ID ±25 56.3 47.