MSC025SMA120B Description
1200V, 25 mΩ N-Channel mSiC™ MOSFET MSC025SMA120B Product Overview 1200V, 25 mΩ typical at VGS = 20V, 28 mΩ typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, TO-247. DRAIN (TERMINAL 2, BACKSIDE) GATE (TERMINAL 1) 1 2 3 SOURCE (TERMINAL.
MSC025SMA120B Key Features
- AEC-Q101 qualified option available
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS pliant Benefits
- High efficiency to enable lighter and more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses