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MSCSM120AM042T6LIAG - SiC MOSFET

Key Features

  • The following are key features of the MSCSM120AM042T6LIAG device:.
  • SiC Power MOSFET.
  • Low RDS(on).
  • High temperature performance.
  • M2.5 signals connectors.
  • Very low stray inductance.
  • M4 and M5 power connectors.
  • Internal thermistor for temperature monitoring.
  • Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM120AM042T6LIAG device:.
  • High efficiency converter.

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Full PDF Text Transcription (Reference)

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MSCSM120AM042T6LIAG Very Low Stray Inductance Phase Leg SiC MOSFET Power Module : Product Overview : The MSCSM120AM042T6LIAG device is a very low stray inductance phase leg 1200V, 495A silicon carbide (SiC) MOSFET power module. Note:  All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004631A-page 1 MSCSM120AM042T6LIAG Features The following are key features of the MSCSM120AM042T6LIAG device: • SiC Power MOSFET – Low RDS(on) – High temperature performance • M2.