MSCSM120AM042T6LIAG
MSCSM120AM042T6LIAG is SiC MOSFET manufactured by Microchip Technology.
Very Low Stray Inductance Phase Leg Si C MOSFET Power Module
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Product Overview
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The MSCSM120AM042T6LIAG device is a very low stray inductance phase leg 1200V, 495A silicon carbide (Si C) MOSFET power module.
Note: All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.
© 2022 Microchip Technology Inc. and its subsidiaries
Data Sheet
DS00004631A-page 1
Features
The following are key Features of the MSCSM120AM042T6LIAG device:
- Si C Power MOSFET
- Low RDS(on)
- High temperature performance
- M2.5 signals connectors
- Very low stray inductance
- M4 and M5 power connectors
- Internal thermistor for temperature monitoring
- Aluminum Nitride (Al N) substrate for improved thermal performance
Benefits
The following are the benefits of MSCSM120AM042T6LIAG device:
- High efficiency converter
- Outstanding performance at high frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- Low profile
- Ro HS pliant
Application
The MSCSM120AM042T6LIAG device is designed for the following applications:
- Welding...
