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SST12LP17E Datasheet High-gain Power Amplifier Module

Manufacturer: Microchip Technology

Overview: 2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E Data Sheet SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module based on the highly-reliable InGaP/GaAs HBT technology. It is designed in pliance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28% power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing 3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm. This power amplifier requires no external RF matching, and only requires one external DC-bias capacitor to meet the specified performance. It offers high-speed power-up/-down control through a single reference voltage pin and includes a temperature-stable, VSWR insensitive power detector voltage output. SST12LP17E is offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-contact USON package.

Key Features

  • Input/Output ports internally matched to 50 and DC decoupled.
  • High gain:.
  • Typically 28.

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