MT41K512M4 Datasheet | Micron Technology

2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM - 64 Meg x 4 x 8 banks MT41K256M8 - 32 Meg x 8 x 8 banks MT41K128M16 - 16 Meg x 16 x 8 banks Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V patible mode. Features - VDD = VDDQ = 1.35V (1.283- 1.45V) - Backward-patible to VDD = VDDQ = 1.5V ±0.075V - Differential bidirectional data strobe - 8n-bit prefetch architecture - Differential clock inputs (CK, CK#) - 8 internal banks - Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals - Programmable CAS (READ) latency (CL) - Programmable posted CAS additive latency (AL) - Programmable CAS (WRITE) latency (CWL) - Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) - Selectable BC4 or BL8 on-the-fly (OTF) - Self refresh mode - TC of 95°C - 64ms,...