MT41K512M4 Datasheet PDF - Micron Technology 1.35V DDR3L SDRAM Specs

MT41K512M4 - 1.35V DDR3L SDRAM

Datasheet Summary

Description

DDR3L SDRAM MT41K512M4 64 Meg x 4 x 8 banks MT41K256M8 32 Meg x 8 x 8 banks MT41K128M16

The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.

Features

VDD = VDDQ = 1.35V (1.283.
1.45V).
Backward-compatible to VDD = VDDQ = 1.5V ±0.075V.
Differential bidirectional data strobe.
8n-bit prefetch architecture.
Differential clock inputs (CK, CK#).
8 internal banks.
Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
Programmable CAS (READ) latency (CL).
Programmable posted CAS additive latency (AL).
Programmable CAS (WRITE) l.

Datasheet Details

Part number	MT41K512M4
Manufacturer	Micron Technology
File Size	3.34 MB
Description	1.35V DDR3L SDRAM
Datasheet	MT41K512M4 Datasheet
Additional preview pages of the MT41K512M4 datasheet.

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Full PDF Text Transcription

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2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Features • VDD = VDDQ = 1.35V (1.283–1.45V) • Backward-compatible to VDD = VDDQ = 1.5V ±0.

Published: Feb 16, 2012 |