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MT41K512M4 - 1.35V DDR3L SDRAM

General Description

DDR3L SDRAM MT41K512M4 64 Meg x 4 x 8 banks MT41K256M8 32 Meg x 8 x 8 banks MT41K128M16

The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.

Key Features

  • VDD = VDDQ = 1.35V (1.283.
  • 1.45V).
  • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V.
  • Differential bidirectional data strobe.
  • 8n-bit prefetch architecture.
  • Differential clock inputs (CK, CK#).
  • 8 internal banks.
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
  • Programmable CAS (READ) latency (CL).
  • Programmable posted CAS additive latency (AL).
  • Programmable CAS (WRITE) l.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Features • VDD = VDDQ = 1.35V (1.283–1.45V) • Backward-compatible to VDD = VDDQ = 1.5V ±0.