MT46V32M8 Datasheet | Micron Technology

256Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM MT46V64M4 - 16 Meg x 4 x 4 banks MT46V32M8 - 8 Meg x 8 x 4 banks MT46V16M16 - 4 Meg x 16 x 4 banks Features - VDD VDD = = 2.5V 2.6V ±0.2V; ±0.1V; VDDQ VDDQ = = 2.5V 2.6V ±0.2V ±0.1V (DDR400)1 - Bidirectional data strobe (DQS) transmitted/ received with data, that is, source-synchronous data capture (x16 has two - one per byte) - Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle - Differential clock inputs (CK and CK#) - mands entered on each positive CK edge - DQS edge-aligned with data for READs; center- aligned with data for WRITEs - DLL to align DQ and DQS...