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MT49H16M18 - 16 Meg x 18 x 8 Banks CIO RLDRAM 2

Download the MT49H16M18 datasheet PDF. This datasheet also covers the MT49H32M9 variant, as both devices belong to the same 16 meg x 18 x 8 banks cio rldram 2 family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Features.
  • 533 MHz DDR operation (1.067 Gb/s/pin data rate).
  • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
  • Organization.
  • 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36.
  • 8 internal banks for concurrent operation and maxi- mum bandwidth.
  • Reduced cycle time (15ns at 533 MHz).
  • Nonmultiplexed addresses (address multiplexing option available).
  • SRAM-type interface.
  • Programmable READ latency (RL), row cycle time, and.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT49H32M9-MicronTechnology.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MT49H16M16 2 Meg x 16 x 8 Banks Reduced Latency DRAM Micron
MT49H16M36 576Mb CIO Reduced Latency Micron
MT49H32M18 576Mb CIO Reduced Latency Micron
MT49H64M9 576Mb CIO Reduced Latency Micron
MT49H8M32 1 Meg x 32 x 8 Banks Reduced Latency DRAM Micron

Other Datasheets by Micron Technology

Part Number Description
MT49H16M18C SIO RLDRAM 2
MT49H32M9 32 Meg x 9 x 8 Banks CIO RLDRAM 2
MT49H8M36 8 Meg x 36 x 8 Banks CIO RLDRAM 2
MT41K128M16 1.35V DDR3L SDRAM
MT41K128M8 Automotive DDR3L SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks 288Mb: x9, x18, x36 CIO RLDRAM 2 Features Features • 533 MHz DDR operation (1.067 Gb/s/pin data rate) • 38.