• Part: MT49H16M18C
  • Description: SIO RLDRAM 2
  • Manufacturer: Micron Technology
  • Size: 6.09 MB
Download MT49H16M18C Datasheet PDF
Micron Technology
MT49H16M18C
MT49H16M18C is SIO RLDRAM 2 manufactured by Micron Technology.
Features Features - 533 MHz DDR operation (1.067 Gb/s/pin data rate) - 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) - Organization - 16 Meg x 18 separate I/O - 8 banks - Cyclic bank switching for maximum bandwidth - Reduced cycle time (15ns at 533 MHz) - Nonmultiplexed addresses (address multiplexing option available) - SRAM-type interface - Programmable READ latency (RL), row cycle time, and burst sequence length - Balanced READ and WRITE latencies in order to optimize data bus utilization - Data mask for WRITE mands - Differential input clocks (CK, CK#) - Differential input data clocks (DKx, DKx#) - On-die DLL generates CK edge-aligned data and output data clock signals - Data valid signal (QVLD) - 32ms refresh (8K refresh for each bank; 64K refresh mand must be issued in total each 32ms) - HSTL I/O (1.5V or 1.8V nominal) - 25- 60Ω matched...