Part MT4C4M4E9
Description 4 MEG x 4 EDO DRAM
Manufacturer Micron Technology
Size 291.14 KB
Micron Technology
MT4C4M4E9

Overview

  • Industry-standard x4 pinout, timing, functions and packages
  • State-of-the-art, high-performance, low-power CMOS silicon-gate process
  • Single power supply (+3.3V ±0.3V or +5V ±10%)
  • All inputs, outputs and clocks are TTL-compatible
  • Refresh modes: RAS#-ONLY, HIDDEN and CAS#BEFORE-RAS# (CBR)
  • Optional Self Refresh (S) for low-power data retention
  • 11 row, 11 column addresses (2K refresh) or 12 row, 10 column addresses (4K refresh)
  • Extended Data-Out (EDO) PAGE MODE access cycle
  • 5V-tolerant inputs and I/Os on 3.3V devices