MT54W4MH8B Overview
MARKING1 -4 -5 -6 -7.5 MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B F 1. A Part Marking Guide for the FBGA devices can be found on Micron’s Web site http://.micron./numberguide. The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, lowpower CMOS designs using an advanced 6T CMOS process.
MT54W4MH8B Key Features
- DLL circuitry for accurate output data placement
- Separate independent read and write data ports with concurrent transactions
- 100 percent bus utilization DDR READ and WRITE operation
- Fast clock to valid data times
- Full data coherency, providing most current data
- Two-tick burst counter for low DDR transaction size
- Double data rate operation on read and write ports
- Two input clocks (K and K#) for precise DDR timing at clock rising edges only
- Two output clocks (C and C#) for precise flight time and clock skew matching-clock and data delivered together to receiv
- Single address bus