MT54W4MH9B Datasheet | Micron Technology

ADVANCE‡ .. 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM 36Mb QDR™II SRAM 2-WORD BURST Features - DLL circuitry for accurate output data placement MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B Figure 1 165-Ball FBGA - Separate independent read and write data ports with concurrent transactions - 100 percent bus utilization DDR READ and WRITE operation - Fast clock to valid data times - Full data coherency, providing most current data - Two-tick burst counter for low DDR transaction size - Double data rate operation on read and write ports - Two input clocks (K and K#) for precise DDR timing at clock rising edges only - Two output clocks (C...