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MT44K16M36 - 1 Meg x 36 x 16 Banks RLDRAM-3

Download the MT44K16M36 datasheet PDF. This datasheet also covers the MT44K32M18 variant, as both devices belong to the same 1 meg x 36 x 16 banks rldram-3 family and are provided as variant models within a single manufacturer datasheet.

General Description

9 General Notes 9 State Diagram 10 Functional Block Diagrams 11 Ball Assignments and Descriptions 13 Package Dimensions 17 Electrical Characteristics IDD Specifications 18 Electrical Specifications Absolute Ratings and I/O Capacitance 25 Absolute Maximum Ratings 25 Input

Key Features

  • RLDRAM 3 MT44K32M18.
  • 2 Meg x 18 x 16 Banks MT44K16M36.
  • 1 Meg x 36 x 16 Banks Features.
  • 1066 MHz DDR operation (2133 Mb/s/ball data rate).
  • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency).
  • Organization.
  • 32 Meg x 18, and 16 Meg x 36 common I/O (CIO).
  • 16 banks.
  • 1.2V center-terminated push/pull I/O.
  • 2.5V VEXT, 1.35V VDD, 1.2V VDDQ I/O.
  • Reduced cycle time (tRC (MIN) = 7.5 - 12ns).
  • SDR addres.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT44K32M18-Micron.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Features • 1066 MHz DDR operation (2133 Mb/s/ball data rate) • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization – 32 Meg x 18, and 16 Meg x 36 common I/O (CIO) – 16 banks • 1.2V center-terminated push/pull I/O • 2.5V VEXT, 1.35V VDD, 1.2V VDDQ I/O • Reduced cycle time (tRC (MIN) = 7.