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MT44K32M36 - 2 Meg x 36 x 16 Banks RLDRAM-3

Download the MT44K32M36 datasheet PDF. This datasheet also covers the MT44K64M18 variant, as both devices belong to the same 2 meg x 36 x 16 banks rldram-3 family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • RLDRAM 3 MT44K64M18.
  • 4 Meg x 18 x 16 Banks MT44K32M36.
  • 2 Meg x 36 x 16 Banks Features.
  • 1200 MHz DDR operation (2400 Mb/s/ball data rate).
  • 86.4Gb/s peak bandwidth (x36 at 1200 MHz clock frequency).
  • Organization.
  • 64 Meg x 18, and 32 Meg x 36 common I/O (CIO).
  • 16 banks.
  • 1.2V center-terminated push/pull I/O.
  • 2.5V VEXT, 1.35V VDD, 1.2V VDDQ (optional 1.35V VDDQ for 2400 operation only).
  • Reduced cycle time (tR.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT44K64M18-Micron.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
MT44K32M18 2 Meg x 18 x 16 Banks RLDRAM-3
MT44K16M36 1 Meg x 36 x 16 Banks RLDRAM-3
MT44K64M18 4 Meg x 18 x 16 Banks RLDRAM-3
MT4067-P 256K x 1 DRAM
MT40A1G16 1.2V DDR4 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1.125Gb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K64M18 – 4 Meg x 18 x 16 Banks MT44K32M36 – 2 Meg x 36 x 16 Banks Features • 1200 MHz DDR operation (2400 Mb/s/ball data rate) • 86.4Gb/s peak bandwidth (x36 at 1200 MHz clock frequency) • Organization – 64 Meg x 18, and 32 Meg x 36 common I/O (CIO) – 16 banks • 1.2V center-terminated push/pull I/O • 2.5V VEXT, 1.35V VDD, 1.2V VDDQ (optional 1.35V VDDQ for 2400 operation only). • Reduced cycle time (tRC (MIN) = 6.