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MT44K32M18 - 2 Meg x 18 x 16 Banks RLDRAM-3

General Description

9 General Notes 9 State Diagram 10 Functional Block Diagrams 11 Ball Assignments and Descriptions 13 Package Dimensions 17 Electrical Characteristics IDD Specifications 18 Electrical Specifications Absolute Ratings and I/O Capacitance 25 Absolute Maximum Ratings 25 Input

Key Features

  • RLDRAM 3 MT44K32M18.
  • 2 Meg x 18 x 16 Banks MT44K16M36.
  • 1 Meg x 36 x 16 Banks Features.
  • 1066 MHz DDR operation (2133 Mb/s/ball data rate).
  • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency).
  • Organization.
  • 32 Meg x 18, and 16 Meg x 36 common I/O (CIO).
  • 16 banks.
  • 1.2V center-terminated push/pull I/O.
  • 2.5V VEXT, 1.35V VDD, 1.2V VDDQ I/O.
  • Reduced cycle time (tRC (MIN) = 7.5 - 12ns).
  • SDR addres.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Features • 1066 MHz DDR operation (2133 Mb/s/ball data rate) • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization – 32 Meg x 18, and 16 Meg x 36 common I/O (CIO) – 16 banks • 1.2V center-terminated push/pull I/O • 2.5V VEXT, 1.35V VDD, 1.2V VDDQ I/O • Reduced cycle time (tRC (MIN) = 7.