MT5C6401 Overview
Key Specifications
Operating Voltage: 5 V
Max Voltage (typical range): 5.5 V
Min Voltage (typical range): 4.5 V
Length: 15.9 mm
Description
The MT5C6401 is organized as a 65,556 x 1 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process. Micron SRAMs are fabricated using doublelayer metal, double-layer polysilicon technology.
Key Features
- High-performance, low-power, CMOS double-metal process
- Single +5V ±10% power supply
- Easy memory expansion with /C/E option
- Timing 9ns access 10ns access 12ns access 15ns access 20ns access 25ns access
- Packages Plastic DIP (300 mil) Plastic SOJ (300 mil)
- 2V data retention
- Temperature Commercial Industrial Automotive Extended MARKING
