2N6383
TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/523 Devices 2N6383 2N6384 2N6385 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol 2N6383 2N6384 2N6385 Unit
VCEO VCBO VEBO IB IC PT Top, Tstg 40 40 60 60 5.0 0.25 10 6.0 100 -55 to +175 Max. 1.75 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
@ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 34.2 m W/0C above TA > +250C 2) Derate linearly 571 m W/0C above TC > +250C
TO-3- (TO-204AA)
- See Appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 m Adc 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 2N6383...
