2N7368 - NPN HIGH POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N7368
Manufacturer	Microsemi (now Microchip Technology)
File Size	216.07 KB
Description	NPN HIGH POWER SILICON TRANSISTOR
Datasheet	2N7368 Datasheet

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www.DataSheet4U.com TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/622 Devices 2N7368 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W Collector-Emitter Voltage 80 VCEO Collector-Base Voltage 80 VCBO Emitter-Base Voltage 7.0 VEBO Base Current IB 4.0 Collector Current 10 IC DataSheet4U.com Total Power Dissipation @ TC = 250C (1) 115 PT Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg DataShee THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC 0 Max. 1.5 TO-254* 1) Derate linearly 0.657 W/ C for TC > 25 C *See appendix A for package outline 0 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min.