2N7371 - PNP DARLINGTON HIGH POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N7371
Manufacturer	Microsemi (now Microchip Technology)
File Size	75.23 KB
Description	PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
Datasheet	2N7371 Datasheet

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TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/623 Devices 2N7371 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC Value 100 100 5.0 0.2 12 100 -65 to +175 Max. 1.5 Units Vdc Vdc Vdc Adc Adc W 0 www.DataSheet4U.com C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 0 Unit C/W TO-254AA* 1) Derate linearly 0.667 W/0C above TC > +250C *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max.