Datasheet Summary
TECHNICAL DATA
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/623 Devices 2N7371 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC
Value
100 100 5.0 0.2 12 100 -65 to +175 Max. 1.5
Units
Vdc Vdc Vdc Adc Adc W
..
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case
Unit C/W
TO-254AA-
1) Derate linearly 0.667 W/0C above TC > +250C
- See Appendix A for package...